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CS 35
Phase Control Thyristors
VRRM = 800-1400 V IT(RMS) = 120 A IT(AV)M = 69 A
TO-208AC (TO-65)
2 3
VRSM VDSM V 900 1300 1500
VRRM VDRM V 800 1200 1400
Type
1 2
3
CS 35-08io4 CS 35-12io4 CS 35-14io4
1
1/4"-28 UNF-2 A
1 = Anode, 2 = Cathode, 3 = Gate
Symbol IT(RMS) IT(AV)M ITSM
Test Conditions TVJ = TVJM Tcase = 85C; 180 sine Tcase = 80C; 180 sine TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Maximum Ratings 120 63 69 1200 1340 1100 1250 7200 7550 6050 6500 150 A A A A A A A A2s A2s A2s A2s A/ms
q q
q q
Features Thyristor for line frequencies International standard package JEDEC TO-208AC Planar glassivated chip Long-term stability of blocking currents and voltages
I2t
TVJ = 45C VR = 0 TVJ = TVJM VR = 0
Applications Motor control Power converter AC power controller
q q q
q q q
(di/dt)cr
TVJ = TVJM repetitive, IT = 150 A f = 50 Hz, tP =200 ms VD = 2/3 VDRM IG = 0.5 A non repetitive, IT = IT(AV)M diG/dt = 0.5 A/ms TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) TVJ = TVJM IT = IT(AV)M tP = 30 ms tP = 500 ms
Advantages Space and weight savings Simple mounting Improved temperature and power cycling
400 1000 10 5 0.5 10 -40...+125 125 -40...+125
A/ms V/ms W W W V C C C Nm lb.in. g
(dv/dt)cr PGM PG(AV) VRGM TVJ TVJM Tstg Md Weight
Dimensions in mm (1 mm = 0.0394")
Mounting torque
2.5 22 20
Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions
(c) 2000 IXYS All rights reserved
1-3
CS 35
Symbol IR, ID VT VT0 rT VGT IGT VGD IGD IL IH tgd tq RthJC RthJH dS dA a Test Conditions TVJ = TVJM; VR = VRRM; VD = VDRM IT = 150 A; TVJ = 25C Characteristic Values 10 1.5 0.85 3.5 typ. 1.5 1.9 100 200 0.2 1 100 80 2 100 0.4 0.6 1.7 1.7 50 mA V V mW V V mA mA V mA mA mA ms ms K/W K/W mm mm m/s2
For power-loss calculations only (TVJ = 125C) VD = 6 V; VD = 6 V; TVJ = TVJM; TVJ = 25C TVJ = -40C TVJ = 25C TVJ = -40C VD = 2/3 VDRM
TVJ = 25C; tP = 30 ms IG = 0.1 A; diG/dt = 0.1 A/ms TVJ = 25C; VD = 6 V; RGK = TVJ = 25C; VD = 1/2 VDRM IG = 0.1 A; diG/dt = 0.1 A/ms TVJ = TVJM; IT = 50 A, tP = 200 ms; di/dt = -10 A/ms VR = 100 V; dv/dt = 10 V/ms; VD = 2/3 VDRM DC current DC current Creepage distance on surface Strike distance through air Max. acceleration, 50 Hz
10 8 V 6 4 VG 2 1 0.8 0.6 0.4 0.2
500
1: PG(AV)= 0.5 W 2: PGM= 5 W; tG = 500 ms 3: PGM= 10 W; tG = 30 ms
A 400
typ. lim. TVJ= 25C TVJ= 125C
23 1 C B A
IGD: TVJ= -40C IGD: TVJ= 0C IGD: TVJ= 25C
IT 300
200
100
IGD: TVJ= 25C IGD: TVJ=125C
0.1 100
2
4 68
0 0 1 2 3 VT V 4
101
102
103 mA 104 IG
Fig. 1 Gate trigger range Triggering: A = no; B = possible, C = safe (c) 2000 IXYS All rights reserved
Fig. 2 On-state characteristics
2-3
CS 35
1200 A 1000 ITSM 800 6 104 As
2
150
VR = 0 V
A
50Hz, 80%VRRM TVJ = 45C TVJ = 125C
I2t 4
TVJ = 45C TVJ = 125C
IT(AV)M 100
DC 180 sin 120 60 30
600
400
2
50
200
0 10-3
103 10-2 10-1 t 100 s 101 1 2 3 4 5 6 7 ms 10 89 t
0 0 50 100 C 150 Tcase
Fig. 3 Surge overload current ITSM: crest value, t: duration
200 W 150 PT
Fig. 4 I2t versus time (1-10 ms)
Fig. 5 Maximum forward current at case temperature
RthJA :
0.9 K/W 1.3 K/W 1.6 K/W 3.3 K/W
100
50
DC 180 sin 120 60 30
0 0 20 40 60 80 0 100 120 A 140 IT(AV)M 50 100
Tamb
C 150
Fig. 6 Power dissipation versus on-state current and ambient temperature
0.8 K/W 0.6 ZthJH 0.4
30 60 120 180 DC
RthJH for various conduction angles d: d DC 180 120 60 30 RthJH (K/W) 0.6 0.65 0.677 0.725 0.775
Constants for ZthJH calculation:
0.2
i 1 2 3 4
10-2 10-1 100 101 t s 102
Rthi (K/W) 0.01 0.09 0.30 0.20
ti (s) 0.001 0.013 0.3 0.9
0.0 10-3
Fig. 7 Transient thermal impedance junction to heatsink
(c) 2000 IXYS All rights reserved
3-3

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